DC/DC Converter for IGBT/SiC MOSFET Driver - QA_(T)-R3G Series
The range and requirements of semiconductor devices are constantly expanding with the emergence of new energy industry. The semiconductor devices' key component in EV charging and PV SVG systems is IGBT/SiC MOSFET, which requires higher standards for driving solutions.
MORNSUN has introduced the NEW DC/DC converter QA-R3G family special for IGBT/SiC MOSFET Driver.
Advantages
1. Isolation voltage: 5000VAC, reinforced insulation
Based on MORNSUN independent IC design, QA-R3G family’s isolation voltage is up to 5000VAC, higher than the conventional products on the market (3750VAC). And the QA-R3G family can meet the requirements of reinforced insulation, the overall reliability has been greatly improved.
2. Long-term insulation voltage: 1700V
IGBT/SiC MOSFET as the mainstream semiconductor devices, the most voltage classes are 650V/900V/1200V/1700V. Complying with IEC-61800-5-1 standard, QA-R3G family features a long-term insulation voltage (continuous discharge) up to 1700V, which can be used for the IGBT/SiC MOSFET devices that their voltages below 1700V.
3. Performance upgrade compared with QA series
|
Parameter |
QA Series |
QA-R3G Series |
|
|
1 |
Efficiency |
80% |
86% |
|
2 |
Ripple |
75mVpp |
50mVpp |
|
3 |
Capacitive Load |
220uF |
2200uF |
|
4 |
ESD performance |
±6kV |
±8kV |
Selection Guide
Applications
QA_(T)-R3G Series can be widely used in the IGBT/SiC MOSFET driving EV charging and PV industry solutions.
Features
|
QA-R3G Series
|
QA_T-R3G Series
|
