4.8W DC/DC Converter supports 2 sets of IGBT Drivers - QA_HD2-R3 / QA_HCD2-R3 Series

Introduction

MORNSUN has the 3rd generation DC/DC converter QA-R3/QA_C-R3 series for IGBT/SiC MOSFET drivers. By adopting the newest power technology of internal asymmetric voltage output, we launched the QA_HD2-R3 / QA_HCD2-R3 series this March. One module can supply power to two sets of drivers, greatly reducing the comprehensive cost, which is the cost-efficient solution for the applications of new energy equipment such as EV chargers and PV SVG systems.

Advantages

1. 5000VAC high isolation voltage (Reinforced insulation)

This series can provide two sets of isolated output voltage, output 1 - output 2 isolation voltage up to 3750VAC, while the input-output isolation voltage up to 5000VAC, which is better than the mainstream products on the market. They meet the reinforced insulation design requirement and greatly enhanced reliability.

 

2. Continuous barrier withstands voltage 1700V

The product design is based on the IEC-61800-5-1 standard, meeting the continuous barrier withstand voltage of 1700V, and the application range can cover IGBT/SiC MOSFET devices of 1700V and below. The primary and secondary electrical gap/ creepage distance is up to 22.36mm (typ.).

 

3. High performance

① Supports two sets of drivers and meets half-bridge rectifier application requirements

② Low ripple & noise: 50mVpp

③ Max. Capacitive Load: 2200µF

④ Capacitance: 4.2pF (typ.)

⑤ High efficiency of up to 85%

 

4. High cost-efficient

One module supplies power to two sets of drivers, greatly reducing the comprehensive cost. What’s more, this series adopts the power technology of internal asymmetric voltage output to minimize the drive loss of IGBT/SIC MOSFETs.

 

Applications

As a DC/DC module for IGBT/SiC MOSFET driver, QA series can be used to drive IGBT/SiC MOSFET devices in PV inverters, motor drives, EV charger and other applications.

 

Taking the PV SVG system as an example, QA series can be used together with the drive IC to drive the back-end IGBT devices to achieve effective operation of the system.

PS: QA-T-R3 (2.4W) with SMD package is in development. For more information please CONTACT us or request a SAMPLE.

 

Features

• 5000VAC high isolation voltage (Reinforced insulation)

• Partial Discharge 1700V

• CMTI>200kV/µs

• Max. Capacitive Load: 2200µF

• Capacitance: 4.2pF (typ.)

• High efficiency up to 85%

• DIP package

• Operating temperature range: -40℃ to +105℃

• Continuous short-circuit protection